FMBT2222ADW1 Folha de dados(PDF) - Formosa MS

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FMBT2222ADW1 Folha de dados (PDF) - Formosa MS

FMBT2222ADW1 Datasheet PDF - Formosa MS


Nome de Peças	FMBT2222ADW1

Download	FMBT2222ADW1 Download

Tamanho do Arquivo	130.24 Kbytes

página	10 Pages

Fabricante Electrônico	FORMOSA [Formosa MS]

Página de início	http://www.formosams.com

Logo

Descrição Electrónicos

Dual NPN Epitaxial Planar Transistor

FMBT2222ADW1 Datasheet (PDF)

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Download Folha de dados

FMBT2222ADW1 Datasheet PDF - Formosa MS


Nome de Peças	FMBT2222ADW1

Download	FMBT2222ADW1 Click to download

Tamanho do Arquivo	130.24 Kbytes

página	10 Pages

Fabricante Electrônico	FORMOSA [Formosa MS]

Página de início	http://www.formosams.com

Logo

Descrição Electrónicos	Dual NPN Epitaxial Planar Transistor

FMBT2222ADW1 Folha de dados (HTML) - Formosa MS

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FMBT2222ADW1 Datasheet HTML 8Page - Formosa MS

FMBT2222ADW1 Datasheet HTML 9Page - Formosa MS

FMBT2222ADW1 Datasheet HTML 10Page - Formosa MS

FMBT2222ADW1 Detalhes do produto

600mA Silicon NPN Epitaxial Planar Transistor

Features
• High collector-emitterbreakdien voltage.
(BVCEO = 40V@IC=10mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2222ADW1-H.

Nº de peça semelhante - FMBT2222ADW1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Formosa MS	FMBT2222A	601Kb / 9P	600mA Silicon NPN Epitaxial Planar Transistor
First Components Intern...	FMBT2222A	715Kb / 3P	FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction
Formosa MS	FMBT2222A	434Kb / 9P	SMD NPN Transistor
Formosa MS	FMBT2222AW	91Kb / 10P	SMD NPN Transistor

Descrição semelhante - FMBT2222ADW1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
TECH PUBLIC Electronics...	MMDT3904	1Mb / 4P	Dual NPN Silicon Epitaxial Planar Transistor
TECH PUBLIC Electronics...	TPMMDT3904	1Mb / 4P	Dual NPN Silicon Epitaxial Planar Transistor
First Silicon Co., Ltd	UMC5N	497Kb / 4P	EPITAXIAL PLANAR NPNPNP Dual Digital Transistor
SEMTECH ELECTRONICS LTD...	MMDTXA4415DW	424Kb / 4P	NPN/PNP Silicon Epitaxial Planar Dual Transistor
DONGGUAN YOU FENG WEI E...	MMDTXA4415DW	608Kb / 4P	NPN/PNP Silicon Epitaxial Planar Dual Transistor
Hi-Sincerity Mocroelect...	HI41C	31Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR
	HJ14C	32Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR
	HJ47	30Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR
	HJ669A	22Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
	HLB123T	37Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR

Sobre a Formosa MS

Formosa MS is a Taiwanese semiconductor company that specializes in the design and manufacture of integrated circuits (ICs) and semiconductor devices for a wide range of applications. The company was founded in 1979 and is based in Taipei, Taiwan.

Formosa MS's product portfolio includes analog and mixed-signal ICs, power management ICs, LED lighting ICs, and automotive ICs, among others. The company's products are used in various industries, such as automotive, industrial, consumer electronics, and communications.

Formosa MS is committed to quality and reliability, and it has obtained various certifications, including ISO 9001, ISO 14001, and IATF 16949. The company's manufacturing facilities use advanced production equipment and quality control processes to ensure the highest levels of product performance and reliability.

Today, Formosa MS is recognized as a leading semiconductor company in Taiwan, with a strong reputation for providing high-quality and innovative solutions to its customers. The company continues to invest in research and development to stay at the forefront of new technologies and applications in the semiconductor industry.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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