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NE321000 Folha de dados (PDF) - California Eastern Labs

NE321000 Datasheet PDF - California Eastern Labs
Nome de Peças NE321000
Download  NE321000 Download

Tamanho do Arquivo   141.29 Kbytes
página   6 Pages
Fabricante Electrônico  CEL [California Eastern Labs]
Página de início  http://www.cel.com
Logo CEL - California Eastern Labs
Descrição Electrónicos ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

NE321000 Datasheet (PDF)

Go To PDF Page Download Folha de dados
NE321000 Datasheet PDF - California Eastern Labs

Nome de Peças NE321000
Download  NE321000 Click to download

Tamanho do Arquivo   141.29 Kbytes
página   6 Pages
Fabricante Electrônico  CEL [California Eastern Labs]
Página de início  http://www.cel.com
Logo CEL - California Eastern Labs
Descrição Electrónicos ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

NE321000 Folha de dados (HTML) - California Eastern Labs

NE321000 Datasheet HTML 1Page - California Eastern Labs NE321000 Datasheet HTML 2Page - California Eastern Labs NE321000 Datasheet HTML 3Page - California Eastern Labs NE321000 Datasheet HTML 4Page - California Eastern Labs NE321000 Datasheet HTML 5Page - California Eastern Labs NE321000 Datasheet HTML 6Page - California Eastern Labs

NE321000 Detalhes do produto

DESCRIPTION
NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.

FEATURES
• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
• HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz
• GATE LENGTH: ≤0.2 µm
• GATE WIDTH: 160 µm




Nº de peça semelhante - NE321000

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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NE321000 NEC-NE321000 Datasheet
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California Eastern Labs
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Descrição semelhante - NE321000

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
California Eastern Labs
NE24283B CEL-NE24283B Datasheet
49Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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NE32400 NEC-NE32400_98 Datasheet
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   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32684A NEC-NE32684A Datasheet
194Kb / 5P
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California Eastern Labs
NE24200 CEL-NE24200 Datasheet
47Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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NEC
NE32484A NEC-NE32484A_98 Datasheet
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   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32984D NEC-NE32984D Datasheet
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   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32584C NEC-NE32584C_98 Datasheet
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   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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California Eastern Labs
NE32584 CEL-NE32584 Datasheet
58Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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NEC
NE24200 NEC-NE24200_00 Datasheet
46Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
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Sobre a California Eastern Labs


California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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