General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology. Features • -1.03A, -500V, RDS(on) = 10.5Ω @VGS = -10 V • Low gate charge ( typical 11 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
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