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TC1101V Folha de dados (PDF) - Transcom, Inc.

TC1101V Datasheet PDF - Transcom, Inc.
Nome de Peças TC1101V
Download  TC1101V Download

Tamanho do Arquivo   90.14 Kbytes
página   2 Pages
Fabricante Electrônico  TRANSCOM [Transcom, Inc.]
Página de início  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.
Descrição Electrónicos Low Noise and Medium Power GaAs FETs

TC1101V Datasheet (PDF)

Go To PDF Page Download Folha de dados
TC1101V Datasheet PDF - Transcom, Inc.

Nome de Peças TC1101V
Download  TC1101V Click to download

Tamanho do Arquivo   90.14 Kbytes
página   2 Pages
Fabricante Electrônico  TRANSCOM [Transcom, Inc.]
Página de início  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.
Descrição Electrónicos Low Noise and Medium Power GaAs FETs

TC1101V Folha de dados (HTML) - Transcom, Inc.

TC1101V Datasheet HTML 1Page - Transcom, Inc. TC1101V Datasheet HTML 2Page - Transcom, Inc.

TC1101V Detalhes do produto

DESCRIPTION

The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.



FEATURES

Via holes for source grounding

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

High Associated Gain: Ga = 13 dB Typical at 12 GHz

High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz

Breakdown Voltage: BVDGO ≥ 9 V

Lg = 0.25 µm, Wg = 160 µm

All-Gold Metallization for High Reliability

Tight Vp ranges control

High RF input power handling capability

100 % DC Tested




Nº de peça semelhante - TC1101V

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Descrição semelhante - TC1101V

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