Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Renesas Technology Corp |
NX6342EP
|
194Kb / 7P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
California Eastern Labs |
NX6342EP
|
899Kb / 6P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Technology Corp |
NX8346TS
|
172Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
NX8369TB
|
213Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs |
NX8369TB
|
214Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Technology Corp |
NX8349TB
|
204Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
NX8349YK
|
253Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
NX8349TB
|
211Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs |
NX8349TS
|
705Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Technology Corp |
NX8346TS
|
164Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|