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ST93C66B6TR Folha de dados (PDF) - STMicroelectronics

ST93C66B6TR Datasheet PDF - STMicroelectronics
Nome de Peças ST93C66B6TR
Download  ST93C66B6TR Download

Tamanho do Arquivo   107.57 Kbytes
página   13 Pages
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descrição Electrónicos 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

ST93C66B6TR Datasheet (PDF)

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ST93C66B6TR Datasheet PDF - STMicroelectronics

Nome de Peças ST93C66B6TR
Download  ST93C66B6TR Click to download

Tamanho do Arquivo   107.57 Kbytes
página   13 Pages
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descrição Electrónicos 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

ST93C66B6TR Folha de dados (HTML) - STMicroelectronics

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ST93C66B6TR Detalhes do produto

DESCRIPTION
This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10% and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66.
The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 4K bit memory is divided into either 512 x 8 bit bytes or 256 x 16 bit words. The organization may be selected by a signal applied on the ORG input.

■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION
■ DUAL ORGANIZATION: 256 x 16 or 512 x 8
■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS
■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
■ READY/BUSY SIGNAL DURING PROGRAMMING
■ SINGLE SUPPLY VOLTAGE:
   – 4.5V to 5.5V for ST93C66 version
   – 3V to 5.5V for ST93C67 version
■ SEQUENTIAL READ OPERATION
■ 5ms TYPICAL PROGRAMMING TIME
■ ST93C66 and ST93C67 are replaced by the M93C66




Nº de peça semelhante - ST93C66B6TR

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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ST93C06 STMICROELECTRONICS-ST93C06 Datasheet
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Descrição semelhante - ST93C66B6TR

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
ST93CS66 STMICROELECTRONICS-ST93CS66 Datasheet
124Kb / 16P
   4K 256 x 16 SERIAL MICROWIRE EEPROM
logo
ATMEL Corporation
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   Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
AT93C66B-SSHM-T ATMEL-AT93C66B-SSHM-T Datasheet
854Kb / 21P
   3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
AT93C56B-SSHM-T ATMEL-AT93C56B-SSHM-T Datasheet
854Kb / 21P
   3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
logo
STMicroelectronics
ST93C56 STMICROELECTRONICS-ST93C56 Datasheet
108Kb / 13P
   2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C06 STMICROELECTRONICS-ST93C06 Datasheet
118Kb / 15P
   256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM
logo
SHANGHAI BELLING CO., L...
BL93C56 BELLING-BL93C56 Datasheet
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   2K bits (256 X 8 or 128 X 16)/ 4K bits (512 X 8 or 256 X 16) Three-wire Serial EEPROM
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STMicroelectronics
ST93C46A STMICROELECTRONICS-ST93C46A Datasheet
111Kb / 13P
   1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM
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ATMEL Corporation
AT24HC04B ATMEL-AT24HC04B Datasheet
617Kb / 19P
   Two-wire Serial EEPROM 4K (512 x 8)
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Hitachi Semiconductor
HN58X2402SI HITACHI-HN58X2402SI Datasheet
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   Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit)
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Sobre a STMicroelectronics


A STMicroelectronics é um fabricante multinacional de eletrônicos e semicondutores com sede em Genebra, Suíça.

A empresa oferece uma ampla gama de produtos, incluindo microcontroladores, sensores, amplificadores de energia e circuitos integrados para várias aplicações nos mercados automotivo, industrial e de consumo.

Fundada em 1987, a STMicroelectronics possui operações em mais de 100 países e é uma das maiores empresas de semicondutores do mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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