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CY7C1618KV18 Folha de dados (PDF) - Cypress Semiconductor

CY7C1618KV18 Datasheet PDF - Cypress Semiconductor
Nome de Peças CY7C1618KV18
Download  CY7C1618KV18 Download

Tamanho do Arquivo   753.0 Kbytes
página   32 Pages
Fabricante Electrônico  CYPRESS [Cypress Semiconductor]
Página de início  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor
Descrição Electrónicos 144-Mbit DDR II SRAM Two-Word Burst Architecture

CY7C1618KV18 Datasheet (PDF)

Go To PDF Page Download Folha de dados
CY7C1618KV18 Datasheet PDF - Cypress Semiconductor

Nome de Peças CY7C1618KV18
Download  CY7C1618KV18 Click to download

Tamanho do Arquivo   753.0 Kbytes
página   32 Pages
Fabricante Electrônico  CYPRESS [Cypress Semiconductor]
Página de início  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor
Descrição Electrónicos 144-Mbit DDR II SRAM Two-Word Burst Architecture

CY7C1618KV18 Folha de dados (HTML) - Cypress Semiconductor

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CY7C1618KV18 Detalhes do produto

Functional Description
The CY7C1618KV18, and CY7C1620KV18 are 1.8-V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. On CY7C1618KV18 and CY7C1620KV18, the burst counter takes in the least significant bit of the external address and bursts two 18-bit words in the case of CY7C1618KV18 and two 36-bit words in the case of CY7C1620KV18 sequentially into or out of the device.

Features
■ 144-Mbit density (8M × 18, 4M × 36)
■ 333 MHz clock for high bandwidth
■ Two-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
   ❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Synchronous internally self-timed writes
■ DDR II operates with 1.5-cycle read latency when DOFF is asserted high
■ Operates similar to DDR I device with one cycle read latency when DOFF is asserted low
■ 1.8-V core power supply with high-speed transceiver logic (HSTL) inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4 V–VDD)
   ❐ Supports both 1.5-V and 1.8-V I/O supply
■ Available in 165-ball fine-pitch ball grid array (FBGA) package (15 × 17 × 1.4 mm)
■ Offered in Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase locked loop (PLL) for accurate data placement




Nº de peça semelhante - CY7C1618KV18

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Cypress Semiconductor
CY7C1618KV18-300BZXC CYPRESS-CY7C1618KV18-300BZXC Datasheet
1Mb / 32P
   144-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1618KV18-333BZXC CYPRESS-CY7C1618KV18-333BZXC Datasheet
1Mb / 32P
   144-Mbit DDR II SRAM Two-Word Burst Architecture
More results


Descrição semelhante - CY7C1618KV18

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Cypress Semiconductor
CY7C161KV18 CYPRESS-CY7C161KV18 Datasheet
1Mb / 32P
   144-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1623KV18 CYPRESS-CY7C1623KV18 Datasheet
773Kb / 28P
   144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture
CY7C1625KV18 CYPRESS-CY7C1625KV18 Datasheet
894Kb / 33P
   144-Mbit QDR짰 II SRAM Two-Word Burst Architecture
CY7C1518AV18 CYPRESS-CY7C1518AV18_11 Datasheet
1Mb / 29P
   72-Mbit DDR-II SRAM Two-Word Burst Architecture
CY7C1418KV18 CYPRESS-CY7C1418KV18_12 Datasheet
1Mb / 31P
   36-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1316KV18 CYPRESS-CY7C1316KV18 Datasheet
1,019Kb / 32P
   18-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1648KV18 CYPRESS-CY7C1648KV18_12 Datasheet
857Kb / 30P
   144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1668KV18 CYPRESS-CY7C1668KV18 Datasheet
771Kb / 30P
   144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1648KV18 CYPRESS-CY7C1648KV18 Datasheet
783Kb / 29P
   144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1523KV18 CYPRESS-CY7C1523KV18_13 Datasheet
792Kb / 28P
   72-Mbit DDR II SIO SRAM Two-Word Burst Architecture
More results




Sobre a Cypress Semiconductor


O Cypress Semiconductor é uma empresa americana especializada no design e fabricação de circuitos integrados digitais e analógicos de alto desempenho (ICS).
A empresa foi fundada em 1982 e está sediada em San Jose, Califórnia, EUA.
O Cypress oferece uma ampla gama de produtos, incluindo microcontroladores, produtos de memória, soluções de conectividade sem fio e outros ICs digitais e analógicos.
Os produtos da empresa são usados ​​em várias aplicações, como eletrônicos de consumo, sistemas automotivos, sistemas industriais e muito mais.
O CYPRESS é conhecido por sua experiência em tecnologia de sinal misto e programável em tecnologia de sistema em um chip (PSOC), produtos de alta qualidade e inovação no campo dos sistemas incorporados.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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